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| IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS(R) Power-Transistor Features * N-channel - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 75 7.1 80 V m A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-19048 SP0002-19040 SP0002-19043 Marking 2N0807 2N0807 2N0807 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=80A Value 80 80 320 810 20 300 -55 ... +175 55/175/56 mJ V W C Unit A Rev. 1.0 page 1 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 A V DS=75 V, V GS=0 V, T j=25 C V DS=75 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version 75 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.01 1 A - 1 1 5.8 5.5 100 100 7.4 7.1 nA m Rev. 1.0 page 2 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s V R=40 V, I F=I S, di F/dt =100 A/s 0.9 80 320 1.3 V A Q gs Q gd Qg V plateau V DD=60 V, I D=80 A, V GS=0 to 10 V 25 69 144 5.4 37 116 180 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=80 A, R G=2.2 V GS=0 V, V DS=25 V, f =1 MHz 4700 1260 580 26 50 61 30 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 110 140 ns Reverse recovery charge2) 1) Q rr - 470 590 nC Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 132A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) Defined by design. Not subject to production test. See diagram 13. Qualified at -20V and +20V. 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 10 V 350 100 300 80 250 60 P tot [W] 200 150 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 100 50 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 0.5 10 s 100 s 1 ms 100 10-1 0.1 Z thJC [K/W] I D [A] 0.05 10 10-2 0.01 single pulse 1 0.1 1 V DS [V] 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] Rev. 1.0 page 4 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 300 10 V 7V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 C parameter: V GS 40 250 35 30 200 RDS(on) [mW] I D [A] 25 150 6V 20 100 5.5 V 15 50 5V 4.5 V 10 6.5 V 10 V 0 0 2 4 5 6 8 10 0 20 40 60 I D [A] 80 100 120 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 320 280 8 Typ. Forward transconductance g fs = f(I D); T j = 25C parameter: g fs 150 125 240 200 160 120 50 80 40 175 C 100 g fs [S] 25 C -55 C I D [A] 75 25 0 2 3 4 0 6 7 8 0 50 100 150 200 5 V GS [V] I D [A] Rev. 1.0 page 5 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 80 A; VGS = 10 V 12 10 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 10 3.5 1250 A 3 R DS(on) [m] V GS(th) [V] 8 250 A 2.5 6 2 4 1.5 2 -60 -20 20 60 100 140 180 1 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 12 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 104 Ciss 102 C [pF] I F [A] 103 Coss 101 175 C 25 C Crss 102 0 5 10 15 20 25 30 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V DS [V] V SD [V] Rev. 1.0 page 6 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 13 Typical avalanche energy E AS = f(T j) parameter: I D = 80A 900 800 10 700 600 8 14 Typ. gate charge V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 15V 60V E AS [mJ] V GS [V] 500 400 300 200 6 4 2 100 0 25 75 125 175 0 0 20 40 60 80 100 120 140 160 T j [C] Q gate [nC] 15 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 16 Gate charge waveforms 90 V GS 85 Qg V BR(DSS) [V] 80 75 70 Q gate Q gs Q gd 65 -60 -20 20 60 100 140 180 T j [C] Rev. 1.0 page 7 2006-03-03 IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Published by Infineon Technologies AG St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-03-03 |
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